





The study focuses on the development of a unique four-component alloy based on Heusler alloys, featuring high spin polarization—a key parameter for creating efficient spintronic devices.
Unlike conventional electronics, which rely on the electron charge, spintronic technologies use the quantum property of the electron—the spin—which allows for increased processing speed and reduced power consumption. An alloy with partial mixing of gallium and arsenic exhibited stable half-metallic behavior and 100% spin polarization, paving the way for new computing platforms.
According to Associate Professor of the Department of Radiophysics and Electronics Oksana Pavlukhina, this fundamental discovery opens up possibilities for purpose-driven modification of material properties and the development of revolutionary next-generation microchips. The scientists intend to continue experiments in search of optimal alloys for practical applications in spintronics and quantum technologies.
This step may become crucial for overcoming the limits of traditional electronics and laying the foundation for ultra-powerful and energy-efficient computing systems of the future.
Earlier, we reported that the Russian Federal Security Service announced the detention in Crimea of four women who were members of a covert terrorist cell belonging to an international organization banned in the Russian Federation.